By G. Mourier
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Extra resources for Crossed-field Microwave Device. Principal Elements of Crossed-Field Devices
Since the circuit susceptive currents are generally large with respect to the rf beam current, changes in the beam susceptive current produce only small changes in the oscil lating frequency. With higher values of load conductance, the beam currents assume an increasingly important role in determining the operating frequency of the system. The total rf beam current available is limited and therefore, as the value of the load conductance is increased, the rf voltage decreases. The current flowing through the circuit capacitance must therefore also decrease and, for sufficiently high values of load conductance, its value will become of the same order of magnitude as the beam susceptive cur rent.
Secondly, it is necessary to limit and control the number of electrons which enter the interaction space. In the original experiments on magnetron voltage tuning, it was found that the dc anode voltage could be made to tune the frequency of oscil lation over ranges as large as 2:1 in ratio. No mechanical tuning of the anode circuit was required. It was also shown that the frequency varied linearly with and was proportional to the voltage over the entire range. The power output was comparatively insensitive to the wide variation in anode voltage but instead was determined mainly by the magnitude of the load impedance.
The remaining excess voltage represents the energy involved in maintaining whatever phase relationship between the beam-induced rf current and the vane-to-vane rf voltage is required to sustain oscillation in the external circuit. This latter voltage increment plays an important role in determining the operating frequency and power level of a voltage-tunable magnetron and will be discussed further. C. WAVE-BEAM SYNCHRONISM AND BUNCHING The diagram in Fig. 5 shows a portion of the interaction space of an interdigital magnetron and an external singly-tuned circuit.