Download Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and by Panagiotis Dimitrakis PDF

By Panagiotis Dimitrakis

This publication describes the fundamental applied sciences and operation ideas of charge-trapping non-volatile thoughts. The authors clarify the gadget physics of every equipment structure and supply a concrete description of the fabrics concerned in addition to the basic houses of the know-how. smooth fabric houses used as charge-trapping layers, for brand new purposes are introduced.

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Additional resources for Charge-Trapping Non-Volatile Memories: Volume 1 – Basic and Advanced Devices

Example text

Such a challenging technology of 3D device technology is presented and discussed in detail in Chap. 4. The last years, NAND sales increase and become higher than NOR and DRAM which decline dramatically. The process followed to build vertically multilayer stacks of 3D NAND cells reduces the historical reliance on lithography as the dominant and limiting factor in scaling. Furthermore, role of materials-enabled deposition and etch to drive vertical scaling increases. This shift brings formidable 30 P.

In this case, we lose the control of charge injection into the FG. Simultaneously, the charges stored in the conductive FG layer leak through these defects to the substrate reducing dramatically the retention time. Poor retention was also found when TOX become less than 6 nm thick (Clementi and Bez 2005). Furthermore, as the memory cell is scaled down, the cell capacitance is decreased, resulting in the decrease of charge stored. For the operation 45 nm technology node NOR and NAND cells require 1,000 and 500 electrons in the FG.

20b), exactly like in the case of the QD-NVM. , charge move via a trap-to-trap conduction mechanism to source and/or drain regions (Roizin 2007). Vertical charge transport in nitride is also observed and is mitigated by the top oxide and its characterization as “blocking oxide” is now reasonable. Nitride layers can be fabricated having a density of electron and hole traps as high as 1019–1020 cmÀ3 and is basically determined by the fabrication method of silicon nitride material. The most common one is the Low-pressure ChemicalVapor-Deposition (LPCVD), where in a reactor dichlorosilane (DCS) SiH2Cl2 is mixed with ammonia NH3 at 800  C under 200 mTorr pressure using N2 as carrier gas.

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