Download Characterization Methods for Submicron MOSFETs by Gérard Ghibaudo (auth.), Hisham Haddara (eds.) PDF

By Gérard Ghibaudo (auth.), Hisham Haddara (eds.)

It is correct that the Metal-Oxide-Semiconductor Field-Eeffect Transistor (MOSFET) is a key part in glossy microelectronics. it's also real that there's a loss of complete books on MOSFET characterization in gen­ eral. despite the fact that there's greater than that as to the inducement and purposes at the back of penning this publication. over the last decade, machine physicists, researchers and engineers were consistently confronted with new parts which made the duty of MOSFET characterization an increasing number of the most important in addition to tricky. The revolutionary miniaturization of units has triggered numerous phenomena to emerge and regulate the functionality of scaled-down MOSFETs. Localized degradation brought about by means of sizzling provider injection and Random Telegraph sign (RTS) noise generated by means of person traps are examples of those phenomena. hence, it was once inevitable to strengthen new versions and new characterization tools or at the very least adapt the present ones to deal with the detailed nature of those new phenomena. the necessity for extra deep and wide characterization of MOSFET param­ eters has additional elevated because the purposes of this gadget have received floor in lots of new fields during which its functionality has develop into a growing number of sensi­ tive to the homes of its Si - Si0 interface. MOS transistors have crossed 2 the borders of excessive pace electronics the place they function at GHz frequencies. furthermore, MOSFETs at the moment are broadly hired within the subthreshold regime in neural circuits and biomedical applications.

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Rais, PhD Thesis, University EI Jadida (July 1994). G. K. L. Moll, IEEE Trans Electron Devices, ED-31, 1386 (1984). [45] G. Shahidi, D. Antionadis, H. Smith, Electron Device Letters, EDL-9, 94 (1988) . [46] A. Modelli and S. Manzini, Sol. Stat. Electron, 31, 99 (1988). [47] K. Rais, G. Ghibaudo, F. Balestra, M. Dutoit, Proc. 1st European Workshop on Low Temperature Electronics (WOLTE 1), Eds. G. Ghibaudo and F. Balestra, J. Phys. IV, C6, June 1994, p. 19. E. C. E. K. Hu, IEEE Trans Electron Devices, ED-38, 545 (1991).

K. Ko, C. Hu, IEEE Electron Device Letters, EDL-6, 551 (1985). [43] K. Rais, PhD Thesis, University EI Jadida (July 1994). G. K. L. Moll, IEEE Trans Electron Devices, ED-31, 1386 (1984). [45] G. Shahidi, D. Antionadis, H. Smith, Electron Device Letters, EDL-9, 94 (1988) . [46] A. Modelli and S. Manzini, Sol. Stat. Electron, 31, 99 (1988). [47] K. Rais, G. Ghibaudo, F. Balestra, M. Dutoit, Proc. 1st European Workshop on Low Temperature Electronics (WOLTE 1), Eds. G. Ghibaudo and F. Balestra, J. Phys.

The effect of the drain bias on the inversion charge is therefore neglected. Under such condition, the equivalent circuit of the MOS transistor becomes nearly the same as that of an MOS capacitor. Several workers have developed and modified distributed or transmission line models for MOS capacitors [15-18]. The purpose of using transmission line models was to analyze the lateral flow of inversion charges supplied by inverted regions outside the gate area. Similar distributed models were applied later to study the admittance of MOSFETs.

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